FDC8884 mosfet equivalent, n-channel mosfet.
* Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A
* Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 6.0 A
* High performance trench technology for extremely low rDS(on.
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.
Application
* Primary Switch
S D D
Pin 1
G D D
SuperSOTTM -6
S4 D5 D6
3G 2D 1D
MOSF.
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